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| GUNN Diodes TM (R) Anode Heat Sink MG1041 - MG1059 Features High Reliability Low-Phase Noise 9.5-35.5 GHz Operation Pulsed and CW Designs to 20 mW Applications Motion Detectors Transmitters and Receivers Beacons Automotive Collision Avoidance Radars Radars Radiometers Instrumentation Description Microsemi's GaAs Gunn diodes, epi-up (anode heatsink), are fabricated from epitaxial layers grown at MSC by the Vapor Phase Epitaxy technique. The layers are processed using proprietary techniques resulting in ultra- low phase and 1/f noise. The diodes are available in a variety of microwave ceramic packages for operation from 9.5-35.5 GHz. Copyright 2008 Rev: 2009-01-19 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 1 GUNN Diodes TM (R) Anode Heat Sink (Discrete Frequency: Anode Heatsink) MG1041 - MG1059 Typ. Operating Voltage (V) 8 8 5 5 5 Max. Operating Current (mA) 140 200 200 300 300 CW Epi-Up Gunn Diodes (Specifications @ 25C) Part Number MG1052-11 MG1056-11 MG1054-11 MG1058-11 MG1059-11 Operating Frequency1 (GHz) 9.5-11.5 9.5-11.5 23.0-25.0 23.0-25.0 33.5-35.5 Min. Power2 (mW) 10 20 5 10 5 Package Outline3 M11 M11 M11 M11 M11 Pulsed Epi-Up Gunn Diodes (Specifications @ 25C) Part Number MG1041-11 MG1042-11 MG1043-11 MG1044-11 MG1045-11 MG1046-11 1 Operating Frequency1 (GHz) 9.5-11.5 9.5-11.5 9.5-11.5 23.0-25.0 23.0-25.0 23.0-25.0 Min. Power2 (mW) 10 20 30 5 10 20 Typ. Operating Voltage (V) 9 9 10 8 8 8 Max. Operating Current (mA) 110 140 180 120 150 200 Package Outline3 M11 M11 M11 M11 M11 M11 Microsemi Gunn diodes are specified to operate within a narrow range of a customer-designated center frequency within the operating frequency range shown. Additional frequencies are available; Please contact the factory. Power is measured using a critically coupled test cavity. For pulsed diodes, pulse width = 1 S, duty factor = 1% typ. 3 Polarity: cathode is the cap and anode is the heatsink. 2 Typical Characteristics 1.0 25 -50C Power Output (mW) 0.8 IBias Ratio IThreshold 20 15 90C 10 5 0 0 1 2 3 4 5 6 7 0.6 0.4 0.2 0 0 1 2 3 VBias VThreshold Ratio Bias Voltage (V) Power Output vs. Bias Voltage IBias Ratio vs. VBias Ratio IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com Specifications are subject to change. Consult factory for the latest information. These devices are ESD sensitive and must be handled using ESD precautions. These products are supplied with a RoHS complaint Gold finish. Copyright 2008 Rev: 2009-01-19 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 2 |
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